this is information on a product in full production. september 2014 docid026666 rev 1 1/8 8 STTH75S12 turbo 2 ultrafast high voltage rectifier datasheet ? production data features ? ultrafast switching ? low reverse current ? low thermal resistance ? reduces switching and conduction losses description the STTH75S12 is developed using st?s turbo 2 1200 v technology. it is well-suited as a boost diode, especially for use in ups. d47 o-2 a k k table 1. device summary symbol value i f(av) 75 a v rrm 1200 v t rr (typ) 40 ns v f (typ) 1.9 v t j (max) 175 c www.st.com
characteristics STTH75S12 2/8 docid026666 rev 1 1 characteristics to evaluate the conduction losses use the following equation: p = 1.8 x i f(av) + 0.012 i f 2 (rms) table 2. absolute ratings (limiting values at t j = 25 c, unless otherwise specified) symbol parameter value unit v rrm repetitive peak reverse voltage 1200 v i f(rms) forward rms current 106 a i f(av) average forward current, = 0.5 t c = 80 c 75 a i fsm surge non repetitive forward current t p = 10 ms sinusoidal 370 a t stg storage temperature range -65 to +175 c t j maximum operating junction temperature 175 c table 3. thermal parameters symbol parameter value unit r th(j-c) junction to case 0.35 c/w table 4. static electrical characteristics symbol parameter test conditions min. typ. max. unit i r (1) reverse leakage current t j = 25 c v r = v rrm 50 a t j = 150 c 0.2 2 ma v f (2) forward voltage drop t j = 25 c i f = 75 a 3.2 v t j = 150 c 1.9 2.7 1. pulse test: t p = 5 ms, < 2% 2. pulse test: t p = 380 s, < 2% table 5. dynamic characteristics symbol parameter test conditions min. typ. max. unit t rr reverse recovery time t j = 25 c i f = 1 a, v r = 30 v, di f /dt = 200 a/s 40 55 ns i rm reverse recovery current t j = 125 c i f = 75a, v r = 600 v, di f /dt = 200 a/s 26 37 a s softness factor 1.2 q rr reverse recovery charge 5300 nc
docid026666 rev 1 3/8 STTH75S12 characteristics figure 1. average forward power dissipation versus average forward current figure 2. forward voltage drop versus forward current (typical values) p f ( av ) (w) 0 50 100 150 200 250 300 0 102030405060708090100 = 0.05 = 0.1 = 0.2 = 0.5 = 1 i f(av) (a) t = tp/t tp i(a) f 0.1 1.0 10.0 100.0 1000.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 t j = 150 c t j = 25 c v f (v) figure 3. forward voltage drop versus forward current (maximum values) figure 4. relative variation of thermal impedance, junction to case, versus pulse duration i(a) f 0.1 1.0 10.0 100.0 1000.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 t j = 150 c t j = 25 c v f (v) z th(j-c) /r th(j-c) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 single pulse t p (s) figure 5. peak reverse recovery current versus di f /dt (typical values) figure 6. reverse recovery time versus di f /dt (typical values) 0 10 20 30 40 50 0 50 100 150 200 250 300 350 400 450 500 i f = i f(av) v r = 600 v t j = 125 c i(a) rm di f /dt(a/s) t (ns) rr 0 200 400 600 800 1000 0 50 100 150 200 250 300 350 400 450 500 i f = i f(av) v r = 600 v t j = 125 c di f /dt(a/s)
characteristics STTH75S12 4/8 docid026666 rev 1 figure 7. reverse recovery charges versus di f /dt (typical values) figure 8. reverse recovery softness factor versus di f /dt (typical values) 0 2000 4000 6000 8000 10000 0 50 100 150 200 250 300 350 400 450 500 q rr (nc) i f = i f(av) v r = 600 v t j = 125 c di f /dt(a/s) s factor 0.0 0.4 0.8 1.2 1.6 2.0 0 50 100 150 200 250 300 350 400 450 500 i f = i f(av) v r = 600 v t j = 125 c di f /dt(a/s) figure 9. relative variations of dynamic parameters versus junction temperature figure 10. junction capacitance versus reverse voltage applied (typical values) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 25 50 75 100 125 i rm s factor q rr i f = i f(av) v r = 600 v reference: t j = 125 c t j (c) c(pf) 10 100 1000 1 10 100 1000 10000 f = 1 mhz v osc = 30 mv rms t j = 25 c v r (v)
docid026666 rev 1 5/8 STTH75S12 package information 2 package information ? epoxy meets ul94, v0 ? cooling method: by conduction (c) ? recommended torque value: 0.4 nm to 0.6 nm in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. figure 11. do-247 dimension definitions v h l5 l l3 v2 g f f3 l1 f2 l2 l4 v dia a d me
package information STTH75S12 6/8 docid026666 rev 1 table 6. do-247 dimension values ref. dimensions millimeters inches min. typ. max. min. typ. max. a 4.85 5.15 0.191 0.203 d 2.20 2.60 0.086 0.102 e 0.40 0.80 0.015 0.031 f 1.00 1.40 0.039 0.055 f2 2.00 0.078 f3 2.00 2.40 0.078 0.094 g 10.90 0.429 h 15.45 15.75 0.608 0.620 l 19.85 20.15 0.781 0.793 l1 3.70 4.30 0.145 0.169 l2 18.50 0.728 l3 14.20 14.80 0.559 0.582 l4 34.60 1.362 l5 5.50 0.216 m 2.00 3.00 0.078 0.118 v5 5 v2 60 60 dia. 3.55 3.65 0.139 0.143
docid026666 rev 1 7/8 STTH75S12 ordering information 3 ordering information 4 revision history table 7. ordering information order code marking package weight base qty delivery mode STTH75S12w STTH75S12w do-247 4.46 g 50 tube table 8. document revision history date revision changes 18-sep-2014 1 initial release
STTH75S12 8/8 docid026666 rev 1 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2014 stmicroelectronics ? all rights reserved
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